Albany, NY -- (SBWire) -- 02/21/2017 --Global Ferroelectric RAM Market: Inclusive Insight
Ferroelectric RAM, also known as FRAM, is a type of random access memory that amalgamates the characteristics of a dynamic RAM with ROM and flash memory. Ferroelectric RAM enables quick write and read access coupled with the capability to retain data and information even after power loss. As against dynamic RAM, FRAM employs a ferroelectric layers for the purpose of fabrication in place of a dielectric layer. The ferroelectric RAM requires power during reading or writing a cell and thus requires no power in the idle state. Furthermore, unlike flash memories, ferroelectric RAM does not need regular refreshing and thus capable of finishing a writing process in less time.
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This market study is an assessment of the growth scenarios and chronological tract of the global ferroelectric RAM market. It deals with the valuation of the facets that have been projected to influence the expansion of the market both destructively and positively. Further, the significant trends have also been indicated in the publication. The market study further presents an extensive outlook on the seller background of the market referring to Porter's five forces analysis. The research report also deals with the R&D accomplishments, mergers, acquisitions, and essentials on certifications and partnerships. The report analyses the tactics related to shares, profile-raising, and product series of the key companies in the global ferroelectric RAM market.
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Global Ferroelectric RAM Market: Key Trends
The growing concerns over energy conservation supports the development of new energy efficient devices. FRAM is one of the non- volatile random-access memory technology which offers operations similar to that of a flash memory. The application areas of FRAM are extensively increasing owing to the growth in investment in R&D projects. Moreover, FRAM is used in applications such as wireless device and battery-powered wireless sensors because of higher power efficiency. The market is expected to witness a double digit growth in next few years. Improved investment in FRAM development is anticipated to enhance the performance and offer substantial growth opportunity and wider area for its application. Low power consumption of FRAM is a chief factor contributing to the market growth. Additionally, FRAM offers higher write performance as compared with flash memory. One of the key challenge faced by the global FRAM market is high efforts requirement for sales and market development of FRAM. This is because of FRAM being a new technology.
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Global Ferroelectric RAM Market: Regional Outlook
The market is segmented by geography which include North America, Europe, Asia Pacific and Rest of the world. North America is expected to emerge as a leading market in terms of consumption of FRAM over the next couple of years. The various benefits of FRAM are likely to play a significant role in the development of the market in these regions.
Global Ferroelectric RAM Market: Companies Mentioned in the Report
Key players in the market include Infineon Technologies AG, Toshiba Corp., LAPIS Semiconductor Co. Ltd., Ramtron International Corporation, Fujitsu Ltd., and Texas Instruments among others.
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Releases New Report on the Ferroelectric RAM Market 2017 - 2025
This market study is an assessment of the growth scenarios and chronological tract of the global ferroelectric RAM market.