Albany, NY -- (SBWire) -- 05/11/2016 --The report provides a strategic analysis of the global GaN industrial devices market. The global GaN industrial devices market has been segmented on the basis of types, applications and geography. Furthermore, GaN HEMT (High Electron Mobility Transistor) has been bifurcated on the basis of their application areas. The cross sectional analysis of global GaN industrial devices market across the five major geographical segments has also been covered under the purview of this report. Increasing application of GaN based industrial devices in various areas such as automotive, defense, information and communication technology, military, aerospace and power distribution systems is primarily driving the growth of the market. GaN is being widely implemented in radio frequency (RF) devices, light-emitting diodes (LEDs) and power electronics, owing to its ability to operate at high frequency, power density and high temperature.
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Moreover, increasing demand from defense sector for enhanced battlefield performance has consequently accelerated the demand for GaN industrial devices. The major application of GaN in military is its usage in HEMT (High Electron Mobility Transistor), which is essential for high frequency operations. Another factor fuelling the growth of the global GaN industrial devices market is the introduction of advanced technology and large scale production of GaN. Due to rapid improvement in GaN technology, many companies are coming up with new innovative products that are cost-effective and have better design and performance. The conjoint effect of all these drivers and trends is thus set to bolster the growth of the global GaN industrial devices market during the forecast period from 2015-2021.
GaN has found a strong foothold in various applications of power electronics such as security systems, cruise control, inverters, auxiliary power, battery management and voltage converters, due to the rapid development in material processing technologies. Gallium nitride promises to revolutionize the electronics industry and serve as an attractive replacement for silicon devices for applications in the field of electro-mobility and photovoltaic. Developments in improving the breakdown voltage of GaN based devices are indicating the future for the next generation hybrid electric vehicles (HEVs). However, the production cost of pure Gallium nitride is significantly higher compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. This could be one of the major challenges in the commercialization of pure GaN based devices.
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The competitive profiling of the key players in the market and their market share across the five geographic segments namely, North America, Europe, Asia Pacific, Middle East and Africa and Latin America have been covered under the scope of the report. Moreover, the different business strategies that have been adopted by the leading players have been covered in this report. The market attractiveness analysis and supply chain analysis have been included in the report in order to provide an insight into the market dynamics.
An exhaustive analysis of the market dynamics namely, the market drivers, restraints and opportunities has been also included under the purview of the report. Market dynamics are the factors that impact the growth of the market and thus help to understand the current trends in the market. Thus, the report provides a detailed analysis of the global GaN industrial devices market and also offers the forecast from 2015 to 2021.
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Some of the key players in the GaN industrial devices market are, Fujitsu Limited (Tokyo, Japan), GaN Systems Inc (Canada, US), Freescale Semiconductor Inc (Texas, US), Efficient Power Conversion Corporation (California, US), International Rectifier (California, US), NXP Semiconductors N.V. (Netherlands), Renesas Electronics Corporation (Tokyo, Japan), Toshiba Corporation (Tokyo, Japan), Texas Instruments Inc. (Texas, US), International Quantum Epitaxy plc (United Kingdom), Nichia Corporation (Tokushima, Japan), Cree Inc (North Carolina, US) and RF Micro Devices (North Carolina, US) among others.
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GaN Technology Is Set to Replace the Silicon Technology
Gallium Nitride (GaN) has a wide band gap and owing to its advanced features such as high breakdown voltage, high switching frequencies, enhanced power efficiency, high conduction and thermal stability, GaN is largely being preferred for numerous applications.