Trends of IGBT and Thyristor Market Reviewed for 2019 with Fuji Electric, ABB, Infineon Technologies, Fairchild Semiconductor In., Hitachi, Mitsubishi Electric
The insulated gate bipolar transistor (IGBT) and thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. In addition, it also provides the advantage over elevated breakdown voltage and less conduction losses of the bipolar junction transistor (BJT) in order to meet current power need. FACTS systems and HVDC use power electronic converters for power conversion and control power quality. Earlier, IGBTs and thyristors were used as key components in HVDC and FACTS...
View full press release