HTF MI released a new market study on Global High Electron Mobility Transistor Market with 100+ market data Tables, Pie Chat, Graphs & Figures spread through Pages and easy to understand detailed analysis. At present, the market is developing its presence.

Edison, NJ -- (SBWire) -- 01/20/2019 --The Research report presents a complete assessment of the Market and contains a future trend, current growth factors, attentive opinions, facts, and industry validated market data. The research study provides estimates for Global High Electron Mobility Transistor Forecast till 2025*. Some are the key players taken under coverage for this study are Fujitsu (Japan) , Mitsubishi Electric (Japan) , Ampleon (Netherlands) , Qorvo (United States) , Oki Electric (Japan) , Lake Shore Cryotronics (United States) , Cree (United States) , TOSHIBA (Japan) and Microsemi (United States).

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Scope of the Study

The HEMT or High Electron Mobility Transistor is an innovative transistor structure which uses potential well as a channel for electron conduction. It is an essential device for high speed, high frequency, digital circuits and microwave circuits with low noise applications. These applications consist of computing, telecommunications, and instrumentation. Further, the device is also used in RF design, where high performance is required at very high RF frequencies. Rising Demand for transistors from energy & power, Inverter & UPS and other industries are fuelling the market growth. The market study is being classified by Type (GaN , GaN/SiC and GaAs), by Application (Energy & Power , Consumer Electronics , Inverter & UPS and Industrial) and major geographies with country level break-up that includes South America (Brazil, Argentina, Rest of South America) , Asia Pacific (China, Japan, India, South Korea, Taiwan, Australia, Rest of Asia-Pacific) , Europe (Germany, France, Italy, United Kingdom, Netherlands, Rest of Europe) , MEA (Middle East, Africa) , North America (United States, Canada, Mexico) .

Competitive Landscape

Fujitsu (Japan) , Mitsubishi Electric (Japan) , Ampleon (Netherlands) , Qorvo (United States) , Oki Electric (Japan) , Lake Shore Cryotronics (United States) , Cree (United States) , TOSHIBA (Japan) and Microsemi (United States) are some of the key players profiled in the study. Additionally, the Players which are also part of the research are NXP Semiconductors (United States) , ON Semiconductor (United States) and STMicroelectronics (Switzerland).
On 13 Mar, 2018, Qorvo®, a leading provider of innovative RF solutions, today introduced the world's highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor

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Market Drivers

Superior performance & functionalities
Increasing demand from end use industries

Market Trend

Rising Demand for electronic devices in various industries
Increasing investments in R&D activities

Restraints

High level of new entrants

Opportunities

Business opportunity in developed economies

Key Target Audience

Manufacturers of High Electron Mobility Transistors (HEMT)
Distributors/Traders/Wholesalers of High Electron Mobility Transistors (HEMT)
Manufacturers of High Electron Mobility Transistors (HEMT) Subcomponent
Semiconductor industry
Industry Association
Downstream Vendor

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Table of Contents
1 Market Overview
1.1 High Electron Mobility Transistor Introduction
1.2 Market Analysis by Type
1.3 Market Analysis by Applications
1.4 Market Analysis by Regions
1.4.1 North America (United States, Canada and Mexico)
1.4.1.1 United States Market States and Outlook (2013-2023)
1.4.1.2 Canada Market States and Outlook (2013-2023)
1.4.1.3 Mexico Market States and Outlook (2013-2023)
1.4.2 Europe (Germany, France, UK, Russia and Italy)
1.4.2.1 Germany Market States and Outlook (2013-2023)
1.4.2.2 France Market States and Outlook (2013-2023)
1.4.2.3 UK Market States and Outlook (2013-2023)
1.4.2.4 Russia Market States and Outlook (2013-2023)
1.4.2.5 Italy Market States and Outlook (2013-2023)
1.4.3 Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
1.4.3.1 China Market States and Outlook (2013-2023)
1.4.3.2 Japan Market States and Outlook (2013-2023)
1.4.3.3 Korea Market States and Outlook (2013-2023)
1.4.3.4 India Market States and Outlook (2013-2023)
1.4.3.5 Southeast Asia Market States and Outlook (2013-2023)
1.4.4 South America, Middle East and Africa
1.4.4.1 Brazil Market States and Outlook (2013-2023)
1.4.4.2 Egypt Market States and Outlook (2013-2023)
1.4.4.3 Saudi Arabia Market States and Outlook (2013-2023)
1.4.4.4 South Africa Market States and Outlook (2013-2023)
1.4.4.5 Nigeria Market States and Outlook (2013-2023)
1.5 Market Dynamics
1.5.1 Market Opportunities
1.5.2 Market Risk
1.5.3 Market Driving Force
2 Manufacturers Profiles
2.1.1 Business Overview
2.1.2 High Electron Mobility Transistor Type and Applications
2.1.3 High Electron Mobility Transistor Sales, Price, Revenue, Gross Margin and Market Share (2016-2017)
3 Global High Electron Mobility Transistor Market Competition, by Manufacturer
3.1 Global High Electron Mobility Transistor Sales and Market Share by Manufacturer (2016-2017)
3.2 Global High Electron Mobility Transistor Revenue and Market Share by Manufacturer (2016-2017)
3.3 Global High Electron Mobility Transistor Price by Manufacturer (2016-2017)
3.4 Market Concentration Rate
3.4.1 Top 3 High Electron Mobility Transistor Manufacturer Market Share in 2017
3.4.2 Top 5 High Electron Mobility Transistor Manufacturer Market Share in 2017
3.5 Market Competition Trend
….. Continued

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Actual Numbers & In-Depth Analysis, Business opportunities, Market Size Estimation Available in Full Report.

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