Next-generation memory is a new storage technology in the computer world. Advancements in technologies such as artificial intelligence (AI), Internet of Things (IoT), and big data is increasing the demand for highly accessible memory devices, which are compatible with these technologies. This in turn, is expected to propel growth of the global next generation memory market.

Seattle, WA -- (SBWire) -- 10/17/2019 --Next-generation memory is a new storage technology in the computer world. Advancements in technologies such as artificial intelligence (AI), Internet of Things (IoT), and big data is increasing the demand for highly accessible memory devices, which are compatible with these technologies. This in turn, is expected to propel growth of the global next generation memory market.

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IoT devices require extremely low-power, high-performance non-volatile memory to store data. Owing to these factors, the demand for advanced energy harvesting memory chip has increased. According to a press release on February, 2016, Adesto Technologies launched a new conductive RAM memory chip CBRAM that is compatible with IoT devices. CBRAM is a form of resistive RAM, which takes around 50 to 100 times less time to perform read and write operation as compared to NOR flash. In 2015, Hewlett-Packard and SanDisk had announced an agreement to jointly develop 'Storage Class Memory' (SCM) resistive RAM that could replace DRAM and would be 1,000 times faster than NAND flash.

Artificial intelligence (AI) is group of methodology that focuses on formation of intelligent machines with the help of human intelligence such as visual perception, speech recognition, decision-making, and translation between languages. High performance applications of artificial intelligence have increased the demand for high-bandwidth low potential data accesses through processors, storage, and IOs. According to a press release, on September 2017, Intel introduced its new self-learning chip, which is able to make faster decisions from large unstructured data set.

High cost for emerging memory chips and lack of stability under extreme environment conditions, are factors that are expected to restraint growth of the global next-generation memory market during the forecast period.
Next Generation Memory Market: Regional Insights

The global next-generation memory market has been segmented on the basis of regions into North America, Europe, Asia-Pacific, Latin America, and Middle East, and Africa. The market for next-generation memory in Asia-Pacific is expected to account for the largest share by 2025. This growth is attributed to increasing demand for mobile phones and computers. In Asia-Pacific, emerging economies such as India and China are manufacturing hubs for consumer electronic products, including smartphones, home appliances, and televisions. For instance, according to National Bureau of Statistics, in 2016, 1,528.56 million mobile phone subscribers were present in China. Low manufacturing cost in China, Taiwan, and Malaysia is also expected to boost growth of the next-generation memory market in Asia-Pacific.

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Next Generation Memory Market: Competitive Background

Major players operating in the global Next Generation Memory market include IBM Corporation, Intel Corporation, Micron Technology, Inc., Samsung Electronics Co. Ltd., Sandisk Corporation, Toshiba Corporation, Cypress Semiconductor Corporation, Crossbar Inc., Avalanche Technology, Inc., Adesto Technologies, and Fujitsu Ltd.

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