GaN Semiconductor Devices Industry Overview

Portland, OR -- (SBWire) -- 08/01/2017 --Gallium nitride (GaN) semiconductor devices are best alternatives for the silicon-based semiconductor devices. These feature higher power density and have the ability to switch at high frequencies, as well as achieve highest efficiency through novel topologies, such as the totem pole PFC. Higher frequency operation can increase power density by reducing the size of passive components as well as saving energy on cooling the complete system. It enables power management to enhance energy conservation in various applications, such as industrial systems, consumer electronic, and electric vehicle. The global GaN semiconductor devices market is expected to grow at a CAGR of 27.2% from 2017 to 2025.

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The global GaN semiconductor devices market is segmented based on type, devices, application, and geography. Based on type, the market is bifurcated into power semiconductor and opto semiconductor. Based on devices, the market is segmented into rectifier, transistor, diodes, and power IC. Based on application, the market is classified as medical, automotive, aerospace, defense, and consumer electronics. Geographic breakdown and deep analysis of each of the aforesaid segments is included for North America, Europe, Asia-Pacific, and LAMEA.

Market Dynamics

Drivers:

More efficient operation in todays applications at existing frequencies over other semiconductor devices.

Increase in demand for electric vehicle.

Aggrandized need for high voltage operating devices.

Restraints:
Preference of silicon carbide (Sic) in high-voltage semiconductor applications.

Market Players:
The top players in the global GaN semiconductor devices market include RF Micro Devices Incorporated, Fujitsu Ltd., Toshiba Corp., Texas Instruments Inc., Cree Incorporated, Aixtron SE, Mitsubishi Chemical Corporation, Koninklijke Philips N.V., GaN Systems Inc., and Epigan NV.

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MARKET LANDSCAPE

By Type
Power Semiconductor
Opto Semiconductor

By Device
Rectifier
Transistor
Diodes
Power IC

By Application
Medical
Automotive
Aerospace
Defense
Consumer Electronics

By Geography
- North America
- Europe
- Asia-Pacific
- LAMEA

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Table of Content for GaN Semiconductor Devices Market

1. Executive summary
1.1. Key Findings
1.2. Market Attractiveness and Trend analysis
1.3. Competitive Landscape and recent industry development analysis

2. Introduction
2.1. Report Description
2.2. Scope and Definitions
2.3. Research Methodology

3. Market landscape
3.1. Growth Drivers
3.1.1. Impact Analysis
3.2. Restrains and Challenges
3.2.1. Impact Analysis
3.3. Porter's Analysis
3.3.1. Bargaining power of buyers
3.3.2. Bargaining power of suppliers
3.3.3. Threat of substitutes
3.3.4. Industry rivalry
3.3.5. Threat of new entrants
3.4. Global GaN Semiconductor Devices Market Shares Analysis, 2014-2025
3.4.1. Global GaN Semiconductor Devices Market Share by technology, 2014-2025

Continued…

List of Tables
Contain 41 Tables

List of Figures
Contain 49 Figures

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